Patterning process for semiconductor using directed self assembly

Jaewoo Nam; Eun Sung Kim; Daekeun Kang; Hangeun Yu; Kyoungseon Kim; Shiyong Yi; Chul-Ho Shin; Ho-Kyu Kang

doi:10.1117/12.2011631

26 March 2013 Patterning process for semiconductor using directed self assembly

Jaewoo Nam, Eun Sung Kim, Daekeun Kang, Hangeun Yu, Kyoungseon Kim, Shiyong Yi, Chul-Ho Shin, Ho-Kyu Kang

Proceedings Volume 8680, Alternative Lithographic Technologies V; 868011 (2013) https://doi.org/10.1117/12.2011631
Event: SPIE Advanced Lithography, 2013, San Jose, California, United States

Abstract

Directed self-assembly (DSA) process of block copolymers (BCPs) has been considered as a candidate for sub-20nm contact patterning. In recent years the semiconductor manufacturers have been interested in use DSA in production. DSA is based on the intrinsic property of the BCPs which is phase-separation in the molecular scale, but significant problems remain for device application. Process time, high process temperature, defect, and CD distribution make the using of DSA difficult in mass production. One of the most considered problems for DSA is the CD Distribution. A guide material for grapho-epitaxy DSA process requires resistance against high temperature and solvent. We use negative tone develop (NTD) photoresist (PR) guide for simple process and thermal resistance, and additional treatment for resistance against high temperature and solvent. The CD distribution of DSA is highly related to the phase separation itself. In order to get better performance, the polymer chains should have sufficient mobility under heating above their glass temperature. Therefore, film thickness and molecular weight of BCPs are very important parameters for CD distribution of DSA process. From the results, it is proven that guide materials, film thickness of BCPs, and molecular weight of BCPs are significant parameter in order to improve CD distribution of DSA patterns.

Citation Download Citation

Jaewoo Nam, Eun Sung Kim, Daekeun Kang, Hangeun Yu, Kyoungseon Kim, Shiyong Yi, Chul-Ho Shin, and Ho-Kyu Kang "Patterning process for semiconductor using directed self assembly", Proc. SPIE 8680, Alternative Lithographic Technologies V, 868011 (26 March 2013); https://doi.org/10.1117/12.2011631

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available