Paper
26 March 2013 Alignment strategy for mixed e-beam and optical lithography
Paul Duval, Kamal Tabatabaie-Alavi, Dale Shaw, Alan St. Germain
Author Affiliations +
Abstract
Although maskless electron beam lithography is viewed as an alternative lithographic technology by the mainstream semiconductor industry, it has long been a key lithographic tool of the compound semiconductor devices. It combines very high resolution with a high depth of field, but its wide acceptance in semiconductor production has been hindered by lower throughput when compared to optical lithography. Several new approaches to parallel e-beam lithography are currently being developed. These technologies, however, have not yet demonstrated the throughput per dollar invested that the current optical tools achieve. Given the cost and high throughput requirements set by most semiconductor manufacturers, the new parallel e-beam lithography tools are likely to be used for processing only a few critical layers, similar to the way the older electron beam tools are used by compound semiconductor manufacturers. Overlay accuracy is another big challenge when mixing optical and E-beam lithography tools. An alignment mark strategy is needed which will results in optimum registration accuracy between E-beam and optically defined layers on the chip.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Paul Duval, Kamal Tabatabaie-Alavi, Dale Shaw, and Alan St. Germain "Alignment strategy for mixed e-beam and optical lithography", Proc. SPIE 8680, Alternative Lithographic Technologies V, 868021 (26 March 2013); https://doi.org/10.1117/12.1000095
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KEYWORDS
Optical alignment

Metals

Electron beam lithography

Silicon

Gallium arsenide

Lithography

Optical lithography

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