Paper
3 May 2013 Study of EUV and x-ray radiation hardness of silicon photodiodes
Vladimir V. Zabrodsky, Pavel Aruev, Vladimir V. Filimonov, Nikolay A. Sobolev, Evgeniy V. Sherstnev, Viktor P. Belik, Anton D. Nikolenko, Denis V. Ivlyushkin, Valery F. Pindyurin, Nikita S. Shadrin, Artem E. Soldatov, Mikhail R. Mashkovtsev
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Abstract
This work presents the results of long-term observation of the silicon photodiodes spatial profile response and the silicon photodiodes dark current after their exposure to 10.2 eV quanta and in the spectral range of 150–300 eV. Exposure of the photodiodes to quanta of an energy of 10.2 eV was repeated. Several other photodiodes have been irradiated in the spectral range of 700-1800 eV with a dose of 8 J/cm2. The spatial profile of the irradiated photodiodes was studied with 3.49 eV, 10.2 eV and 100 eV quanta. The effect of the recovery of the response spatial profile has been proved for the p+-n diode. An additional useful method of visualization of irradiated photodiode area is also presented.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Vladimir V. Zabrodsky, Pavel Aruev, Vladimir V. Filimonov, Nikolay A. Sobolev, Evgeniy V. Sherstnev, Viktor P. Belik, Anton D. Nikolenko, Denis V. Ivlyushkin, Valery F. Pindyurin, Nikita S. Shadrin, Artem E. Soldatov, and Mikhail R. Mashkovtsev "Study of EUV and x-ray radiation hardness of silicon photodiodes", Proc. SPIE 8777, Damage to VUV, EUV, and X-ray Optics IV; and EUV and X-ray Optics: Synergy between Laboratory and Space III, 87770R (3 May 2013); https://doi.org/10.1117/12.2017478
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KEYWORDS
Photodiodes

Silicon

Extreme ultraviolet

Visualization

X-rays

Extreme ultraviolet lithography

Mirrors

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