Research on passivation of type II InAs/GaSb superlattice photodiodes

Lei Zhang; Li-xue Zhang; Xiang-wei Shen; Xu-bo Zhu; Zhen-yu Peng; Yan-qiu Lv; Jun-jie Si; Wei-guo Sun

doi:10.1117/12.2033223

11 September 2013 Research on passivation of type II InAs/GaSb superlattice photodiodes

Lei Zhang, Li-xue Zhang, Xiang-wei Shen, Xu-bo Zhu, Zhen-yu Peng, Yan-qiu Lv, Jun-jie Si, Wei-guo Sun

Proceedings Volume 8907, International Symposium on Photoelectronic Detection and Imaging 2013: Infrared Imaging and Applications; 890731 (2013) https://doi.org/10.1117/12.2033223
Event: ISPDI 2013 - Fifth International Symposium on Photoelectronic Detection and Imaging, 2013, Beijing, China

Abstract

Type II InAs/GaSb superlattice material, because of its excellent predominance, is becoming the best choice for the third generation infrared detector. Surface passivation, which is one of the most important process during the device fabricated, can improve the performance of superlattice detector greatly. In this work, three passivation methods were experimented based on MWIR superlattices, then after electrodes were fabricated, detectors were tested. From the measurements, the passivation of anodic sulfide cooperating with SiO₂ is more effective than others, zero-bias resistance area product of device with 5μm cutoff wavelength reach up to 10⁴Ω•cm² at 77K, reverse-bias dark current density is reduced to 10^-5A/cm² at -1V, peak detectivity is 10¹⁰cm•Hz^1/2/W and quantum efficiency reach 35%. Retest after a month later, the performance of photodiodes without diversity.

Citation Download Citation

Lei Zhang, Li-xue Zhang, Xiang-wei Shen, Xu-bo Zhu, Zhen-yu Peng, Yan-qiu Lv, Jun-jie Si, and Wei-guo Sun "Research on passivation of type II InAs/GaSb superlattice photodiodes", Proc. SPIE 8907, International Symposium on Photoelectronic Detection and Imaging 2013: Infrared Imaging and Applications, 890731 (11 September 2013); https://doi.org/10.1117/12.2033223

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