New lithography technology for sub-10nm patterning with shrinking organic material

Seiji Morita

doi:10.1117/12.2046307

28 March 2014 New lithography technology for sub-10nm patterning with shrinking organic material

Seiji Morita

Proceedings Volume 9049, Alternative Lithographic Technologies VI; 90491I (2014) https://doi.org/10.1117/12.2046307
Event: SPIE Advanced Lithography, 2014, San Jose, California, United States

Abstract

For making sub-10nm patterns, new lithography technology is proposed in this paper. This is a cost-effective new lithography process using the special organic material which is able to reduce a pattern size by shrinking. Shrinking ratio of various methods, decreasing line edge roughness (LER) and patterning of less than 10nm half pitch size are reported.

Citation Download Citation

Seiji Morita "New lithography technology for sub-10nm patterning with shrinking organic material", Proc. SPIE 9049, Alternative Lithographic Technologies VI, 90491I (28 March 2014); https://doi.org/10.1117/12.2046307

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