Paper
1 May 2014 Investigation of baseline measurement resolution of a Si plate-based extrinsic Fabry-Perot interferometer
Nikolai Ushakov, Leonid Liokumovich
Author Affiliations +
Abstract
Measurement of a wafer thickness is of a great value for fabrication and interrogation of MEMS/MOEMS devices, as well as conventional optical fiber sensors. In the current paper we investigate the abilities of the wavelength-scanning interferometry techniques for registering the baseline of an extrinsic fiber Fabry-Perot interferometer (EFPI) with the cavity formed by the two sides of a silicon plate. In order to enhance the resolution, an improved signal processing algorithm was developed. Various experiments, including contact and non-contact measurement of a silicon wafer thickness were performed, with the achieved resolutions from 10 to 20 pm. This enables one to use the described approach for high-precision measurement of geometric parameters of micro electro (electro-optic) mechanical systems for their characterization, utilization in sensing tasks and fabrication control. An ability of a Si plate-based EFPI interrogated by the developed technique to capture temperature variations of about 4 mK was demonstrated.
© (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Nikolai Ushakov and Leonid Liokumovich "Investigation of baseline measurement resolution of a Si plate-based extrinsic Fabry-Perot interferometer", Proc. SPIE 9132, Optical Micro- and Nanometrology V, 913214 (1 May 2014); https://doi.org/10.1117/12.2052388
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CITATIONS
Cited by 4 scholarly publications.
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KEYWORDS
Silicon

Fabry–Perot interferometry

Semiconducting wafers

Interferometers

Refractive index

Signal processing

Sensors

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