Novolac Based Deep-UV Resists

Dennis R. McKean; Scott A. MacDonald; Nicholas J. Clecak; C. Grant Willson

doi:10.1117/12.968302

1 January 1988 Novolac Based Deep-UV Resists

Dennis R. McKean, Scott A. MacDonald, Nicholas J. Clecak, C. Grant Willson

Proceedings Volume 0920, Advances in Resist Technology and Processing V; (1988) https://doi.org/10.1117/12.968302
Event: Santa Clara Symposium on Microlithography, 1988, Santa Clara, CA, United States

Abstract

This paper describes the results obtained from studies of deep-UV lithographic properties of resists which utilize chemical amplification in novolac resins. These studies have shown that three-component novolac-based systems are surprisingly effective as deep-UV resists despite the high opacity of novolac at 254 nm. Analytical results are described which have measured the amount of Bronsted acid produced in chemical amplification resist films. The minimum acid concentration necessary for acceptable dissolution rates is far less than the corresponding active species content necessary for the proper functioning of diazoketone-novolac deep-UV resists.

Citation Download Citation

Dennis R. McKean, Scott A. MacDonald, Nicholas J. Clecak, and C. Grant Willson "Novolac Based Deep-UV Resists", Proc. SPIE 0920, Advances in Resist Technology and Processing V, (1 January 1988); https://doi.org/10.1117/12.968302

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