Paper
18 August 2014 Simultaneous determination of thickness and refractive indices of birefringent wafer by simple transmission measurement
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Abstract
We demonstrate a method for determining the principal indices of refraction and the thickness of a birefringent wafer. Simply, the light transmittance was measured while rotating the wafer. The directly transmitted beam makes interference with those multiply reflected between the surfaces as in a Fabry-Pérot etalon, producing an interferogram as a function of angle of incidence. We applied this method to a LiNbO3 wafer, determining the absolute values of ordinary and extraordinary indices with an uncertainty of 10-5. In addition to the measurement accuracy, the major advantages of our method are extreme simplicity and environmental robustness in the experiment.
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Hee Joo Choi, Jun Yeol Ryu, and Myoungsik Cha "Simultaneous determination of thickness and refractive indices of birefringent wafer by simple transmission measurement", Proc. SPIE 9203, Interferometry XVII: Techniques and Analysis, 920309 (18 August 2014); https://doi.org/10.1117/12.2063280
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KEYWORDS
Semiconducting wafers

Refractive index

Collimation

Crystals

Polarization

Refraction

Interferometry

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