Paper
4 March 2015 Evaluation of crack-healing behavior in SiNx/SiC nanolaminated thin film by microbending test
M. Nakatani, Y. Tonoya, Y. Harada
Author Affiliations +
Proceedings Volume 9302, International Conference on Experimental Mechanics 2014; 93020S (2015) https://doi.org/10.1117/12.2078930
Event: International Conference on Experimental Mechanics 2014, 2014, Singapore, Singapore
Abstract
The purpose of this study is to evaluate the crack-healing behavior of SiNx/SiC nanolaminated films quantitatively. SiNx/SiC nanolaminated films were fabricated by alternating ion-beam assisted deposition of SiNx and SiC. The fabricated nanolaminated films consisted of four layers with the top layer being SiNx. Smooth and notched microbeam specimens were fabricated using a focused ion beam (FIB) system. The nanosized notch was introduced in form of an imitational crack on the film surface by FIB. Some notched samples were heated at 1000 ºC for 24 to 96 h in air. The fracture strength was evaluated by bending tests using a nanoindentation system. After heating, the notch was filled with reaction products. Energy dispersive X-ray (EDX) analysis revealed that the reaction products contained oxide compounds, most likely SiO2. The fracture load of the notched specimens recovered with increasing heating time. The filling of the notch with oxidation products caused the recovery of the fracture load. However, the recovery was not complete compared with the strength of a smooth sample. It is concluded that the filling of a notch with oxidation products recovers the mechanical strength of SiNx/SiC nanolaminated films only to a certain extent.
© (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. Nakatani, Y. Tonoya, and Y. Harada "Evaluation of crack-healing behavior in SiNx/SiC nanolaminated thin film by microbending test", Proc. SPIE 9302, International Conference on Experimental Mechanics 2014, 93020S (4 March 2015); https://doi.org/10.1117/12.2078930
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KEYWORDS
Silicon carbide

Oxidation

Ion beams

Thin films

Oxides

Nanolithography

Silicon

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