Paper
27 February 2015 IIIV/Si hybrid integrated devices for optical interconnect
Kaixuan Chen, Yuntao Zhu, Jianxin Cheng, Qiangsheng Huang, Xin Fu, Jianhao Zhang, Yaocheng Shi, Jin Liu, Günther Roelkens, Liu Liu
Author Affiliations +
Abstract
We discuss our view of the on-chip optical interconnect infrastructure for future multi-core processers based on wavelength-division-multiplexing (WDM) and our recent results on some key devices for such structures. Cascading performance of various wavelength multiplexers and de-multiplexers including arrayed waveguide gratings (AWGs) and echelle gratings based on the silicon-on-insulator platform are discussed and compared. IIIV based electro-absorption (EA) modulators on silicon realized through benzocyclobutene (BCB) adhesive bonding are analyzed. Ultra short adiabatic taper based mode converters between passive and active structures are designed. The integration of multichannel modulators, detectors and wavelength de-multiplexers is realized.
© (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kaixuan Chen, Yuntao Zhu, Jianxin Cheng, Qiangsheng Huang, Xin Fu, Jianhao Zhang, Yaocheng Shi, Jin Liu, Günther Roelkens, and Liu Liu "IIIV/Si hybrid integrated devices for optical interconnect", Proc. SPIE 9366, Smart Photonic and Optoelectronic Integrated Circuits XVII, 93660I (27 February 2015); https://doi.org/10.1117/12.2085682
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KEYWORDS
Modulators

Waveguides

Optical interconnects

Sensors

Multiplexers

Silicon

Wavelength division multiplexing

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