Quantum-cascade-laser active regions on metamorphic buffer layers

L. J. Mawst; A. Rajeev; J. D. Kirch; T. W. Kim; D. Botez; B. Zutter; P. Buelow; K. Schulte; T. F. Kuech; A. Wood; S. E. Babcock; T. Earles

doi:10.1117/12.2075457

8 February 2015 Quantum-cascade-laser active regions on metamorphic buffer layers

L. J. Mawst, A. Rajeev, J. D. Kirch, T. W. Kim, D. Botez, B. Zutter, P. Buelow, K. Schulte, T. F. Kuech, A. Wood, S. E. Babcock, T. Earles

Author Affiliations +

Proceedings Volume 9370, Quantum Sensing and Nanophotonic Devices XII; 93700E (2015) https://doi.org/10.1117/12.2075457
Event: SPIE OPTO, 2015, San Francisco, California, United States

Abstract

Strained-layer superlattice (SL) structures have been grown by metalorganic vapor phase epitaxy (MOVPE) on metamorphic buffer layers (MBLs) for application in intersubband-transition devices, such as quantum cascade lasers. Using the MBL as an adjustable lattice-parameter platform, we have designed relatively-low-strain quantum-cascade-laser structures that will emit in the 3.0-3.5 μm wavelength range while suppressing carrier leakage from the upper laser level. Thick (10-12 μm) compositionally-graded, hydride-vapor-phase-epitaxy (HVPE)-grown MBL structures are employed. To improve the planarity of the MBL surface, we employ chemical mechanical polishing (CMP) followed by wet chemical etching prior to the growth of the SL/device structures. We find that the wet-chemical etching step is crucial to remove residual damage introduced during CMP. 20-period In_xGa_1-xAs (wells)/Al_yIn_1-yAs (barriers) SLs grown on the MBLs are characterized by x-ray diffraction (XRD). Intersubband electroluminescence emission is observed in the 3.5 μm wavelength range from devices employing such SL structures.

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L. J. Mawst, A. Rajeev, J. D. Kirch, T. W. Kim, D. Botez, B. Zutter, P. Buelow, K. Schulte, T. F. Kuech, A. Wood, S. E. Babcock, and T. Earles "Quantum-cascade-laser active regions on metamorphic buffer layers", Proc. SPIE 9370, Quantum Sensing and Nanophotonic Devices XII, 93700E (8 February 2015); https://doi.org/10.1117/12.2075457

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