A ZnSe/BeTe p-grading superlattice with a low voltage drop for efficient hole injection in green-yellow BeZnCdSe quantum well laser

R. Akimoto

doi:10.1117/12.2078174

10 March 2015 A ZnSe/BeTe p-grading superlattice with a low voltage drop for efficient hole injection in green-yellow BeZnCdSe quantum well laser

R. Akimoto

Author Affiliations +

Proceedings Volume 9382, Novel In-Plane Semiconductor Lasers XIV; 93821T (2015) https://doi.org/10.1117/12.2078174
Event: SPIE OPTO, 2015, San Francisco, California, United States

Abstract

A ZnSe/BeTe p-grading superlattice (p-GSL) with a low voltage drop is reported for BeZnCdSe quantum well laser diode (LD) in green-yellow visible range. A p-GSL is inserted between a p⁺-BeTe for ohmic contact layer and a ZnSe/BeMgZnSe p-cladding layer in a LD, for an efficient hole injection in spite of a large potential barrier height of ~0.8 eV between these layers. A GSL design has hence a great impact on a threshold voltage of lasing and thus reliability in LDs. Simple p-n junction devices with various GSL designs are fabricated, where a p-n junction is formed between p-ZnSe and a n-GaAs. In a p-GSL where a pair of ZnSe/BeTe is repeated, BeTe thickness increases with fixed monolayer (ML) step, while ZnSe thickness decreases with the same step when next pair of ZnSe/BeTe is grown. While a grading of 1 ML step is used in the previous LDs, the new GSL design with smaller grading step of 0.5 ML gives a 2 V lower voltage at 200 A/cm² current injection. Then, LDs characteristics are compared with the GSL of new and old designs, while other layers in LDs are kept nearly identical, which is confirmed by a similar threshold current of ~80 mA and an emission wavelength at ~540 nm in these LDs. The LD with the new GSL design showed a lower threshold voltage for a lasing as well as a higher output power due to a lower device heating.

Citation Download Citation

R. Akimoto "A ZnSe/BeTe p-grading superlattice with a low voltage drop for efficient hole injection in green-yellow BeZnCdSe quantum well laser", Proc. SPIE 9382, Novel In-Plane Semiconductor Lasers XIV, 93821T (10 March 2015); https://doi.org/10.1117/12.2078174

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available