Defects in GaN-based LEDs: impact on internal quantum efficiency and on reliability

M. Meneghini; C. De Santi; M. La Grassa; N. Trivellin; D. Barbisan; M. Ferretti; G. Meneghesso; E. Zanoni

doi:10.1117/12.2077461

9 March 2015 Defects in GaN-based LEDs: impact on internal quantum efficiency and on reliability

M. Meneghini, C. De Santi, M. La Grassa, N. Trivellin, D. Barbisan, M. Ferretti, G. Meneghesso, E. Zanoni

Proceedings Volume 9383, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIX; 93830G (2015) https://doi.org/10.1117/12.2077461
Event: SPIE OPTO, 2015, San Francisco, California, United States

Abstract

This paper reviews the properties of the defects which limit the performance and the reliability of LEDs based on InGaN. More specifically we discuss: (i) the origin and properties of the defects responsible for SRH recombination; (ii) the role of defects in favoring the degradation of InGaN-based LEDs. Original data are compared to previous literature reports to provide a clear understanding of the topic.

Citation Download Citation

M. Meneghini, C. De Santi, M. La Grassa, N. Trivellin, D. Barbisan, M. Ferretti, G. Meneghesso, and E. Zanoni "Defects in GaN-based LEDs: impact on internal quantum efficiency and on reliability", Proc. SPIE 9383, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XIX, 93830G (9 March 2015); https://doi.org/10.1117/12.2077461

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