Impact of pixel-dose optimization on pattern fidelity for helium ion beam lithography on EUV resist

Nima Kalhor; Wouter Mulckhuyse; Paul Alkemade; Diederik Maas

doi:10.1117/12.2085791

20 March 2015 Impact of pixel-dose optimization on pattern fidelity for helium ion beam lithography on EUV resist

Nima Kalhor, Wouter Mulckhuyse, Paul Alkemade, Diederik Maas

Proceedings Volume 9425, Advances in Patterning Materials and Processes XXXII; 942513 (2015) https://doi.org/10.1117/12.2085791
Event: SPIE Advanced Lithography, 2015, San Jose, California, United States

Abstract

This paper presents a heuristic model for scanning helium ion beam lithography (SHIBL) in a EUV chemically amplified resist. The model employs a point-spread function to account for all physical and chemical phenomena involved in the resist activation. Ion shot noise effects are accounted for using Poisson statistics. Our model shows a good agreement with earlier single-pixel SHIBL experiments for determining line width as a function of dose for a desired line-and-space pattern. Furthermore, we propose optimized-pixel-dose SHIBL to improve exposure latitude, LCDU and LWR. Dose optimization is advantageous to single-pixel exposure when the feature size is at least about twice the width of the FWHM of the point-spread function. We confirm this by comparing our modeling results for single-pixel and optimizedpixel- dose exposure modes for line-and-space patterns

Citation Download Citation

Nima Kalhor, Wouter Mulckhuyse, Paul Alkemade, and Diederik Maas "Impact of pixel-dose optimization on pattern fidelity for helium ion beam lithography on EUV resist", Proc. SPIE 9425, Advances in Patterning Materials and Processes XXXII, 942513 (20 March 2015); https://doi.org/10.1117/12.2085791

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