Long Wavelength Photoluminescence Of InAs1_xSbx (0<x<l) Grown By Molecular Beam Epitaxy On (100) InAs

M. Y. Yen; R. People; K. W. Wecht; A. Y. Cho

doi:10.1117/12.947370

15 August 1988 Long Wavelength Photoluminescence Of InAs_{1_x}Sb_x (0<x<l) Grown By Molecular Beam Epitaxy On (100) InAs

M. Y. Yen, R. People, K. W. Wecht, A. Y. Cho

Author Affiliations +

Proceedings Volume 0944, Growth of Compound Semiconductor Structures II; (1988) https://doi.org/10.1117/12.947370
Event: Advances in Semiconductors and Superconductors: Physics and Device Applications, 1988, Newport Beach, CA, United States

Abstract

InAs1_xSbx materials are of great importance due to their potential of replacing HgCdTe material for the fabrication of infrared sources and detectors operating at wavelength 8-12 μm spectral range where the atmospheric absorption is minimum. Heteroepitaxial layers of InAsi_xSbx materials have been successfully prepared by molecular beam epitaxy (MBE) over the complete compositional range (0<x<1) on (100)InAs substrates. Details of the MBE system and the growth have been described elsewhere.1,2 Photoluminescence has been employed to characterize the material quality and explore the possibility of applications in optical sources. Band-edge photoluminescence peak wavelengths as long as 8 pm have been obtained for the first time among III-V compound semiconductor materials in spite of the existence of a large lattice mismatch up to N6.4%. These results are indicative of high quality material.

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M. Y. Yen, R. People, K. W. Wecht, and A. Y. Cho "Long Wavelength Photoluminescence Of InAs_{1_x}Sb_x (0<x<l) Grown By Molecular Beam Epitaxy On (100) InAs", Proc. SPIE 0944, Growth of Compound Semiconductor Structures II, (15 August 1988); https://doi.org/10.1117/12.947370

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