Self-organization phenomena during electrochemical formation of nanoclusters in silicon

Natalia A. Arzhanova; Michael A. Prokaznikov; Alexander V. Prokaznikov

doi:10.1117/12.2180533

18 December 2014 Self-organization phenomena during electrochemical formation of nanoclusters in silicon

Natalia A. Arzhanova, Michael A. Prokaznikov, Alexander V. Prokaznikov

Proceedings Volume 9440, International Conference on Micro- and Nano-Electronics 2014; 944010 (2014) https://doi.org/10.1117/12.2180533
Event: The International Conference on Micro- and Nano-Electronics 2014, 2014, Zvenigorod, Russian Federation

Abstract

A role of surface processes in the developing dynamics of electrochemical reactions between silicon and fluorine containing electrolytes during the pore formation in silicon matrix, which is required for the surface and volume nanostructuring technologies, is examined. The charge exchange processes between the media via the surface were shown to be responsible for the observed anodizing regimes: stable, oscillation, and chaotic. The proposed approach enables one to explain the anodizing regime as associated with synchronized variations of the pore shapes and the global oscillation processes in the silicon/electrolyte system. On the base of computer simulation and analysis of experimental results it was shown the existence of pore formation regimes in silicon/electrolyte system which are controlled by delivery of holes to the surface. A computer model was constructed describing the formation of porous clusters in semiconductor crystals of silicon. It was shown that a special regime exists which is associated with transport of holes. It is described by the equations, which are scale-invariant with respect to the affine transformations. Porous clusters that were formed in these conditions have the property of self-similar fractal.

Citation Download Citation

Natalia A. Arzhanova, Michael A. Prokaznikov, and Alexander V. Prokaznikov "Self-organization phenomena during electrochemical formation of nanoclusters in silicon ", Proc. SPIE 9440, International Conference on Micro- and Nano-Electronics 2014, 944010 (18 December 2014); https://doi.org/10.1117/12.2180533

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