Modeling and simulation of dose effects in bipolar analog integrated circuits

G. I. Zebrev; M. G. Drosdetsky; A. M. Galimov; A. A. Lebedev; I. A. Danilov; V. O. Turin

doi:10.1117/12.2180758

18 December 2014 Modeling and simulation of dose effects in bipolar analog integrated circuits

G. I. Zebrev, M. G. Drosdetsky, A. M. Galimov, A. A. Lebedev, I. A. Danilov, V. O. Turin

Proceedings Volume 9440, International Conference on Micro- and Nano-Electronics 2014; 94401C (2014) https://doi.org/10.1117/12.2180758
Event: The International Conference on Micro- and Nano-Electronics 2014, 2014, Zvenigorod, Russian Federation

Abstract

It is shown that observed non-monotonic behavior of dose degradation in bipolar devices can be explained within the non-linear set of kinetic equations for the oxide trapped charge and surface recombination centers. It has been shown that proposed earlier a physical model of the Enhanced Low Dose Rate Sensitivity (ELDRS) is fully consistent with experimental temperature dependence of charge yield in thick oxides for a range of low temperatures.

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G. I. Zebrev, M. G. Drosdetsky, A. M. Galimov, A. A. Lebedev, I. A. Danilov, and V. O. Turin "Modeling and simulation of dose effects in bipolar analog integrated circuits", Proc. SPIE 9440, International Conference on Micro- and Nano-Electronics 2014, 94401C (18 December 2014); https://doi.org/10.1117/12.2180758

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