TEM Characterization of II-VI Compound Semiconductors

Herbert F. Schaake

doi:10.1117/12.947430

9 August 1988 TEM Characterization of II-VI Compound Semiconductors

Herbert F. Schaake

Proceedings Volume 0946, Spectroscopic Characterization Techniques for Semiconductor Technology III; (1988) https://doi.org/10.1117/12.947430
Event: Advances in Semiconductors and Superconductors: Physics and Device Applications, 1988, Newport Beach, CA, United States

Abstract

Transmission electron microscopy (TEM) has been extensively used to characterize crystalline defects in II-VI compound semiconductors in the systems Hg-Cd-Te, Hg-Zn-Te and Cd-Zn-Te. These compounds are currently of interest for infrared detector and substrate materials. Several examples of the use of TEM to understand and improve these materials are presented. The examples include the characterization of defects in materials grown by most of the techniques currently in use, the structure of anodic oxides grown on these materials, and defects induced during ion implantation.

Citation Download Citation

Herbert F. Schaake "TEM Characterization of II-VI Compound Semiconductors", Proc. SPIE 0946, Spectroscopic Characterization Techniques for Semiconductor Technology III, (9 August 1988); https://doi.org/10.1117/12.947430

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