Paper
1 September 2015 Adjustment characteristics in terahertz transmission through a split ring resonator-based metamaterial
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Abstract
The artificially structured metamaterials has led to many potential applications in terahertz regime, but the role in adjusting the terahertz transmission still needs to be carefully investigated. Currently, designs with split ring resonator (SRR) based metamaterials can provide a promising approach for understanding the terahertz transmission characteristics. In the experiments, a SRR-based metamaterial is proposed for presenting terahertz transmission characteristics. The substrate of the metamaterial is an n-type gallium arsenide (n-GaAs) film grown over a semiinsulating GaAs wafer. Then, the metallic film, fabricated on n-GaAs, is patterned into an arrayed four-gap microstructure according to traditional ultraviolet photolithography methods. The metal film and n-GaAs film form a Schottky contact. In the experiments, the transmission frequency spectrum of the metamaterial has an obvious fluctuation in the 0.6–1.23 THz and 1.52–2.4 THz range, and the experimental results show that the frequency region of the intensive oscillatory signal essentially agrees with that of the metamaterial characteristic transmission spectrum in the 0.5–2.5 THz range. The terahertz characteristic transmission spectrum of the fabricated metamaterial are measured at the central frequency of ~0.5, ~1.0, ~1.5, ~2.0 and ~2.5 THz, thus the oscillation characteristics can be explained by dipole resonance. The measured time-domain transmission signals and corresponding frequency responses based on the metamaterial agree well with calculated results. Therefore, our research shows a potential application of the transmission adjusting roles in terahertz regime.
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Jun Luo, Yehua Bie, Xinyu Zhang, Hongshi Sang, and Changsheng Xie "Adjustment characteristics in terahertz transmission through a split ring resonator-based metamaterial", Proc. SPIE 9544, Metamaterials, Metadevices, and Metasystems 2015, 95442S (1 September 2015); https://doi.org/10.1117/12.2186400
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KEYWORDS
Metamaterials

Terahertz radiation

Gallium arsenide

Optical lithography

Picosecond phenomena

Semiconducting wafers

Metals

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