Paper
8 September 2015 High performance GaN based blue flip-chip light-emitting diodes
G.M. Jin, I.G. Choi, J.C. Park, S.K. Jeon, E.H. Park
Author Affiliations +
Abstract
In this study, high performance nitride-based flip-chip (FC) light-emitting diodes (LEDs) using optimized distributed bragg reflector (DBR) were fabricated and compared with conventional FC-LED using silver (Ag) reflector. Most of FCLEDs are using the silver (Ag) as reflector due to its superior reflectance at visual spectrum region. However, A silver has detrimental problems such as electro-chemical migration and agglomerations, which resulting in reliability issues such as degradation of power drop, unstable operating voltage and leakage issues. Our DBR structure was designed to have 99% at whole visible spectrum range (400~750nm), which is higher reflectance than silver reflector (90~95%). Optical power is higher than higher than the Ag-LED up to 30% @ 500mA. As the current increases up to 1A, the gap slightly decreased. Reliability test results show stable optical power, operating voltage, and leakage maintenance.
© (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
G.M. Jin, I.G. Choi, J.C. Park, S.K. Jeon, and E.H. Park "High performance GaN based blue flip-chip light-emitting diodes", Proc. SPIE 9571, Fourteenth International Conference on Solid State Lighting and LED-based Illumination Systems, 95710S (8 September 2015); https://doi.org/10.1117/12.2185915
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KEYWORDS
Silver

Light emitting diodes

Reflectors

Reflectivity

Reliability

Aluminum

Gallium nitride

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