1.2μm emitting VECSEL based on type-II aligned QWs

C. Möller; C. Berger; C. Fuchs; A. Ruiz Perez; S. W. Koch; J. Hader; J. V. Moloney; W. Stolz

doi:10.1117/12.2212438

10 March 2016 1.2μm emitting VECSEL based on type-II aligned QWs

C. Möller, C. Berger, C. Fuchs, A. Ruiz Perez, S. W. Koch, J. Hader, J. V. Moloney, W. Stolz

Proceedings Volume 9734, Vertical External Cavity Surface Emitting Lasers (VECSELs) VI; 97340H (2016) https://doi.org/10.1117/12.2212438
Event: SPIE LASE, 2016, San Francisco, California, United States

Abstract

Since the invention of VECSELs, their great spectral coverage has been demonstrated and emission wavelengths in the range from UV to almost MIR have been achieved. However, in the infrared regime the laser performance is affected by Auger losses which become significant at large quantum defects. In order to reduce the Auger losses and to develop more efficient devices in the IR, type-II aligned QWs have been suggested as alternative gain medium for semiconductor lasers.

Citation Download Citation

C. Möller, C. Berger, C. Fuchs, A. Ruiz Perez, S. W. Koch, J. Hader, J. V. Moloney, and W. Stolz "1.2μm emitting VECSEL based on type-II aligned QWs", Proc. SPIE 9734, Vertical External Cavity Surface Emitting Lasers (VECSELs) VI, 97340H (10 March 2016); https://doi.org/10.1117/12.2212438

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