Heteroepitaxial growth of cubic boron nitride films on diamond(001) substrates and their n-type doping

Hong Yin

doi:10.1117/12.2208392

26 February 2016 Heteroepitaxial growth of cubic boron nitride films on diamond(001) substrates and their n-type doping

Hong Yin

Proceedings Volume 9748, Gallium Nitride Materials and Devices XI; 974805 (2016) https://doi.org/10.1117/12.2208392
Event: SPIE OPTO, 2016, San Francisco, California, United States

Abstract

This paper firstly introduces c-BN in general and its excellent properties that make c-BN a promising candidate competing with diamond as hard coating and as a future high temperature semiconductor material. Furthermore, this paper gives an overview of the recent advances of the different synthetic techniques towards the heteroepitaxial growth of c-BN films. In the end, it will describe the state of the art of n-type doping of these c-BN epitaxial films through which a c-BN/diamond pn diode can be anticipated.

Citation Download Citation

Hong Yin "Heteroepitaxial growth of cubic boron nitride films on diamond(001) substrates and their n-type doping", Proc. SPIE 9748, Gallium Nitride Materials and Devices XI, 974805 (26 February 2016); https://doi.org/10.1117/12.2208392

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