Generation of 7W nanosecond pulses with 670nm ridge-waveguide lasers

A. Klehr; T. Prziwarka; A. Liero; Th. Hoffmann; J. Pohl; J. Fricke; H.-J. Wünsche; H. Wenzel; W. Heinrich; G. Erbert

doi:10.1117/12.2208333

7 March 2016 Generation of 7W nanosecond pulses with 670nm ridge-waveguide lasers

A. Klehr, T. Prziwarka, A. Liero, Th. Hoffmann, J. Pohl, J. Fricke, H.-J. Wünsche, H. Wenzel, W. Heinrich, G. Erbert

Proceedings Volume 9767, Novel In-Plane Semiconductor Lasers XV; 976705 (2016) https://doi.org/10.1117/12.2208333
Event: SPIE OPTO, 2016, San Francisco, California, United States

Abstract

The aim of this paper is to present detailed experimental and theoretical investigations of the behavior of ridge-waveguide (RW) lasers emitting at 670 nm under injection of sub-ns current pulses with high amplitudes. The RW lasers are based on strained GaInP double quantum wells embedded in an asymmetric AlGaInP/AlInP waveguide structure. The width of the ridge is 15 μm and the cavity length 3 mm. The laser diode is mounted on an in-house developed laser driver with a final stage based on GaN transistors, which generates nearly rectangular shaped current pulses with amplitudes up to 30 A and widths down to 300 ps. The pulse width can be varied electronically between 300 ps and 1.2 ns with a repetition frequency up to 1 MHz, which results in a variation of the pulse width of the emitted optical pulses between 200 ps and 1.2 ns. The maximum pulse power depends on the electrical pulse width and reaches 7.2 W for a ridge width of 15 μm. At high pulse current amplitudes the pulse power saturates. Time-dependent simulations with the drift-diffusion simulator WIAS-TeSCA reveal that accumulation of excess electrons under the ridge is the root cause for the power saturation, limiting the maximum achievable output power.

Citation Download Citation

A. Klehr, T. Prziwarka, A. Liero, Th. Hoffmann, J. Pohl, J. Fricke, H.-J. Wünsche, H. Wenzel, W. Heinrich, and G. Erbert "Generation of 7W nanosecond pulses with 670nm ridge-waveguide lasers", Proc. SPIE 9767, Novel In-Plane Semiconductor Lasers XV, 976705 (7 March 2016); https://doi.org/10.1117/12.2208333

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