Paper
15 March 2016 Line edge roughness frequency analysis for SAQP process
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Abstract
The line edge roughness (LER) and line width roughness (LWR) transfer in a self-aligned quadruple patterning (SAQP) process is shown for the first time. Three LER characterization methods, including conventional standard deviation method, power spectral density (PSD) method and frequency domain 3-sigma method, are used in the analysis. The wiggling is also quantitatively characterized for each SAQP step with a wiggling factor. This work will benefit both process optimization and process monitoring.
© (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Lei Sun, Xiaoxiao Zhang, Shimon Levi, Adam Ge, Hua Zhou, Wenhui Wang, Navaneetha Krishnan, Yulu Chen, Erik Verduijn, and Ryoung-han Kim "Line edge roughness frequency analysis for SAQP process", Proc. SPIE 9780, Optical Microlithography XXIX, 97801S (15 March 2016); https://doi.org/10.1117/12.2229176
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Cited by 8 scholarly publications.
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KEYWORDS
Line edge roughness

Line width roughness

Chemical mechanical planarization

Dielectrophoresis

Optical lithography

Lithography

Semiconductor manufacturing

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