Structure release of silicon micro-channel based on wet etching

Dandan Cui; Guozheng Wang; Jikai Yang; Haibin Li; Qingduo DuanMu

doi:10.1117/12.2217556

5 November 2015 Structure release of silicon micro-channel based on wet etching

Dandan Cui, Guozheng Wang, Jikai Yang, Haibin Li, Qingduo DuanMu

Proceedings Volume 9795, Selected Papers of the Photoelectronic Technology Committee Conferences held June–July 2015; 97952H (2015) https://doi.org/10.1117/12.2217556
Event: Selected Proceedings of the Photoelectronic Technology Committee Conferences held June-July 2015, 2015, Hefei, Suzhou, and Harbin, China

Abstract

Based on wet etching theory, the silicon microchannel structure after electrochemical etching was released in TMAH solution to obtain the through-hole microchannel. The silicon wafer with the different resistivity was selected as the substrate of microchannel plate, the TMAH solution was selected in mass concentration of 28.5wt%, and the SiO₂ passivation layer with the thickness of 200nm was prepared by thermal oxidation for protection of side-wall of microchannel. Contrary to the problem encountered in wet etching, Firstly, the corrosion characteristics of silicon and SiO₂ thin film in TMAH solution were investigated, respectively. In addition, the effects of the pH values of TMAH solution on corrosion characteristics in microstructure releasing of silicon microchannel were studied and analyzed. The experiments show that the silicon wafer with high resistivity can be easily etched, the etching rate of SiO₂ film in TMAH is uniform, and adjusting the pH value of etching solution to make it constant during etching can effectively increase the corrosion rate and decrease the surface roughness of samples.

Citation Download Citation

Dandan Cui, Guozheng Wang, Jikai Yang, Haibin Li, and Qingduo DuanMu "Structure release of silicon micro-channel based on wet etching", Proc. SPIE 9795, Selected Papers of the Photoelectronic Technology Committee Conferences held June–July 2015, 97952H (5 November 2015); https://doi.org/10.1117/12.2217556

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