Plasma shock waves excited by THz radiation

S. Rudin; G. Rupper; M. Shur

doi:10.1117/12.2241984

21 October 2016 Plasma shock waves excited by THz radiation

S. Rudin, G. Rupper, M. Shur

Proceedings Volume 9993, Millimetre Wave and Terahertz Sensors and Technology IX; 99930D (2016) https://doi.org/10.1117/12.2241984
Event: SPIE Security + Defence, 2016, Edinburgh, United Kingdom

Abstract

The shock plasma waves in Si MOS, InGaAs and GaN HEMTs are launched at a relatively small THz power that is nearly independent of the THz input frequency for short channel (22 nm) devices and increases with frequency for longer (100 nm to 1 mm devices). Increasing the gate-to-channel separation leads to a gradual transition of the nonlinear waves from the shock waves to solitons. The mathematics of this transition is described by the Korteweg-de Vries equation that has the single propagating soliton solution.

Conference Presentation

Citation Download Citation

S. Rudin, G. Rupper, and M. Shur "Plasma shock waves excited by THz radiation", Proc. SPIE 9993, Millimetre Wave and Terahertz Sensors and Technology IX, 99930D (21 October 2016); https://doi.org/10.1117/12.2241984

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