CONFERENCE PROCEEDINGS
Advanced Search
Home > Proceedings > Volume PC12001 > Article
Presentation
5 March 2022 Optimization of tunnel junction growth on m-plane GaN substrate for multi-quantum shell-based devices
Shiori Yamamura, Yoshiya Miyamoto, Naoki Sone, Weifang Lu, Renji Okuda, Kazuma Ito, Yukimi Jinno, Nanami Nakayama, Sae Katsuro, Satoshi Kamiyama, Tetsuya Takeuchi, Motoaki Iwaya
Author Affiliations +
Proceedings Volume PC12001, Gallium Nitride Materials and Devices XVII; PC1200109 (2022) https://doi.org/10.1117/12.2608402
Event: SPIE OPTO, 2022, San Francisco, California, United States
Abstract
Current injection through tunnel junctions (TJs) can enhance the external quantum efficiency of nanowire (NW) and multi-quantum-shell-based optical devices, compared. However, control of the impurity concentration profile is difficult in such tiny structure. In this study, we show a simple evaluation method of impurities in TJs growing flatly on m-plane GaN substrates, which have the same crystalline orientation as the luminescent surface of MQS/NWs. It was found to decrease the differential resistance by increase the concentration of Mg in p^(++)-GaN in the TJ.
Conference Presentation
© (2022) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Citation Download Citation
Shiori Yamamura, Yoshiya Miyamoto, Naoki Sone, Weifang Lu, Renji Okuda, Kazuma Ito, Yukimi Jinno, Nanami Nakayama, Sae Katsuro, Satoshi Kamiyama, Tetsuya Takeuchi, and Motoaki Iwaya "Optimization of tunnel junction growth on m-plane GaN substrate for multi-quantum shell-based devices", Proc. SPIE PC12001, Gallium Nitride Materials and Devices XVII, PC1200109 (5 March 2022); https://doi.org/10.1117/12.2608402
ACCESS THE FULL ARTICLE
ORGANIZATIONAL
Sign in with credentials provided by your organization.
INSTITUTIONAL
Select your institution to access the SPIE Digital Library.
SELECT YOUR INSTITUTION
PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
PERSONAL SIGN IN
No SPIE Account? Create one
PURCHASE THIS CONTENT
SUBSCRIBE TO DIGITAL LIBRARY
50 downloads per 1-year subscription
Members: $195
Non-members: $335 ADD TO CART
25 downloads per 1 - year subscription
Members: $145
Non-members: $250 ADD TO CART
PURCHASE SINGLE ARTICLE
Includes PDF, HTML & Video, when available
Members: $17.00
Non-members: $21.00 ADD TO CART
PROCEEDINGS
 PRESENTATION
WATCH
PRESENTATION SAVE TO MY LIBRARY
GET CITATION
Advertisement
Advertisement
KEYWORDS
Gallium nitride
Magnesium
Doping
Ions
Mass spectrometry
Nanowires
Oxides
RELATED CONTENT
Sputtering growth of n++ GaN shell in the tunnel junction...
Proceedings of SPIE (January 01 1900)
HCDI performance of Na 2x3 and Na 2x4 nanowires for...
Proceedings of SPIE (September 09 2019)
Behaviors of vacancy type defects in Mg implanted GaN during...
Proceedings of SPIE (January 01 1900)
Characteristics of n-GaN after ICP etching
Proceedings of SPIE (September 17 2002)
Doped gallium oxide nanowires for photonics
Proceedings of SPIE (February 29 2012)
Influence of nanowire template morphology on the coalescence overgrowth of...
Proceedings of SPIE (February 27 2012)
Criterion for type-two spot originating under pulse-discharge conditions
Proceedings of SPIE (May 01 1994)
Subscribe to Digital Library
Receive Erratum Email Alert
Back to Top