Precise performances of InGaN/GaN-based sidewall emitted light-emitting diodes for ultrathin backlight unit

Tae Kyoung Kim; A. B. M. Hamidul Islam; Yu-Jung Cha; Jae Won Seo; Joon Seop Kwak

doi:10.1117/12.2625709

5 March 2022 Precise performances of InGaN/GaN-based sidewall emitted light-emitting diodes for ultrathin backlight unit

Tae Kyoung Kim, A. B. M. Hamidul Islam, Yu-Jung Cha, Jae Won Seo, Joon Seop Kwak

Author Affiliations +

Proceedings Volume PC12001, Gallium Nitride Materials and Devices XVII; PC120011M (2022) https://doi.org/10.1117/12.2625709
Event: SPIE OPTO, 2022, San Francisco, California, United States

Conference Poster

Abstract

We have fabricated InGaN/GaN multiple-quantum-well flip-chip blue ultrathin side-emitting (USE) light-emitting diode (LED) by top and bottom mirrors and investigated the sidewall light emission performances for backlight unit. Fabricated USE-LED has uniform light-output-power (LOP) and peak wavelength characteristics at each sidewall except poor light extraction efficiency (LEE) which is improved by fabricating ZnO nanorods on each sidewall. The optimized nanorods improve the LEE of USE-LED. Thus, the LOP increases >80% compared to the Reference-LED. Furthermore, the light-tools simulation results reveal that the LEE of nanorods-based USE-LED increases in lateral direction due to decrease in internal reflection of light.

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Tae Kyoung Kim, A. B. M. Hamidul Islam, Yu-Jung Cha, Jae Won Seo, and Joon Seop Kwak "Precise performances of InGaN/GaN-based sidewall emitted light-emitting diodes for ultrathin backlight unit", Proc. SPIE PC12001, Gallium Nitride Materials and Devices XVII, PC120011M (5 March 2022); https://doi.org/10.1117/12.2625709

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