Emission characteristics and temperature stability of InP-based quantum-dot lasers emitting at 1.3 µm

Vinayakrishna Joshi; Sven Bauer; Vitalii Sichkovskyi; Florian Schnabel; Anna Sengül; Johann Reithmaier

doi:10.1117/12.2607785

9 March 2022 Emission characteristics and temperature stability of InP-based quantum-dot lasers emitting at 1.3 μm

Vinayakrishna Joshi, Sven Bauer, Vitalii Sichkovskyi, Florian Schnabel, Anna Sengül, Johann Reithmaier

Proceedings Volume PC12021, Novel In-Plane Semiconductor Lasers XXI; PC1202102 (2022) https://doi.org/10.1117/12.2607785
Event: SPIE OPTO, 2022, San Francisco, California, United States

Abstract

InP-based quantum dot (QD) laser devices emitting at 1.3 µm were realized by incorporating a GaAs nucleation layer underneath the InAs QD layers. A good carrier confinement while retaining the waveguiding properties is achieved by embedding the QDs in In0.528Al0.371Ga0.101As. Length dependent P-I characteristics yielded static parameters, which were comparable to static parameters obtained for InP-based lasers emitting at 1.55 µm. Additionally, temperature dependent measurements were conducted and evaluated. The lasers show ground mode lasing up to high operation temperatures with good temperature stability of the threshold current density and external quantum efficiency.

Conference Presentation

Citation Download Citation

Vinayakrishna Joshi, Sven Bauer, Vitalii Sichkovskyi, Florian Schnabel, Anna Sengül, and Johann Reithmaier "Emission characteristics and temperature stability of InP-based quantum-dot lasers emitting at 1.3 μm", Proc. SPIE PC12021, Novel In-Plane Semiconductor Lasers XXI, PC1202102 (9 March 2022); https://doi.org/10.1117/12.2607785

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