Long lifetime interband cascade laser grown on on-axis Si(001)

Laurent Cerutti; Daniel A. Diaz-Thomas; Jean-Baptiste Rodriguez; Marta Rio-Calvo; Alexei N. Baranov; Eric Tournié

doi:10.1117/12.2607755

9 March 2022 Long lifetime interband cascade laser grown on on-axis Si(001)

Laurent Cerutti, Daniel A. Diaz-Thomas, Jean-Baptiste Rodriguez, Marta Rio-Calvo, Alexei N. Baranov, Eric Tournié

Proceedings Volume PC12021, Novel In-Plane Semiconductor Lasers XXI; PC120210A (2022) https://doi.org/10.1117/12.2607755
Event: SPIE OPTO, 2022, San Francisco, California, United States

Abstract

We report a type-II interband cascade laser grown on an on-axis silicon substrate. We demonstrate continuous-wave lasing operation at temperatures up to 50°C at 3.5µm with a threshold current of 45 mA at room temperature and 20 mW/facet output power. We extrapolate a mean time to failure of at least 300,000 h, which we attribute to the design of the active region eliminating the non-radiative recombination process.

Conference Presentation

Citation Download Citation

Laurent Cerutti, Daniel A. Diaz-Thomas, Jean-Baptiste Rodriguez, Marta Rio-Calvo, Alexei N. Baranov, and Eric Tournié "Long lifetime interband cascade laser grown on on-axis Si(001)", Proc. SPIE PC12021, Novel In-Plane Semiconductor Lasers XXI, PC120210A (9 March 2022); https://doi.org/10.1117/12.2607755

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