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7 June 2022 Exploring the synergy between EUV lithography and directed self-assembly
Hyo Seon Suh, Lander Verstraete, Julie Van Bel, Philippe Bézard, Geert Mannaert, Jae Uk Lee, Shouhua Wang, Ivan Pollentier, Ashish Rathore
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Proceedings Volume PC12054, Novel Patterning Technologies 2022; PC1205402 (2022) https://doi.org/10.1117/12.2622565
Event: SPIE Advanced Lithography + Patterning, 2022, San Jose, California, United States
Abstract
Directed self-assembly (DSA) process has been introduced and developed for more than a decade as one of the alternative advanced patterning techniques in the semiconductor industry. Block copolymer (BCP) is self-assembling into the desired pattern on the lithographically defined pre-pattern on the wafer. Such a bottom-up approach is used to define the pattern which is typically hard to achieve with the traditional top-down approach. As an example, the density of the pattern can be increased with DSA by the factor of 3 or 4 from the 193i lithography pattern. Although similar dimension becomes now accessible with EUV lithography, DSA keeps its benefit; the structure is simply defined by the phase separation of materials rather than the complex light-matter interactions as required for EUV resist patterning. In this presentation, we will discuss the synergetic impact of the combination of EUV and DSA.
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Hyo Seon Suh, Lander Verstraete, Julie Van Bel, Philippe Bézard, Geert Mannaert, Jae Uk Lee, Shouhua Wang, Ivan Pollentier, and Ashish Rathore "Exploring the synergy between EUV lithography and directed self-assembly", Proc. SPIE PC12054, Novel Patterning Technologies 2022, PC1205402 (7 June 2022); https://doi.org/10.1117/12.2622565
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KEYWORDS
Directed self assembly
Extreme ultraviolet lithography
Extreme ultraviolet
Optical lithography
Light-matter interactions
Lithography
Semiconducting wafers
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