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13 June 2022 Highly spatially resolved chemical metrology on latent resist images
Maarten H. van Es, Mehmet Selman Tamer, Robbert Bloem, Elfi van Zeijl, Jacques C. J. Verdonck, Adam Chuang, Diederik J. Maas
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Proceedings Volume PC12055, Advances in Patterning Materials and Processes XXXIX; PC1205504 (2022) https://doi.org/10.1117/12.2614293
Event: SPIE Advanced Lithography + Patterning, 2022, San Jose, California, United States
Abstract
Line edge roughness in chemically amplified EUV resists is strongly determined by the heterogeneity of the resist and the chemical processes between exposure and etching. A direct visualization of the chemical changes during development would obviously help to quickly optimize this process. However, no current technique has the sensitivity and spatial resolution to allow such metrology without adversely affecting the resist chemistry. Here, we show the potential of IR-AFM to follow the chemical processes in resist without causing chemical changes.
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Maarten H. van Es, Mehmet Selman Tamer, Robbert Bloem, Elfi van Zeijl, Jacques C. J. Verdonck, Adam Chuang, and Diederik J. Maas "Highly spatially resolved chemical metrology on latent resist images", Proc. SPIE PC12055, Advances in Patterning Materials and Processes XXXIX, PC1205504 (13 June 2022); https://doi.org/10.1117/12.2614293
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KEYWORDS
Metrology
Electron beam lithography
Electron beams
Inspection
Lithography
Microscopy
Photonic microstructures
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