GaN vacuum nanoelectronic devices

George T. Wang; Keshab R Sapkota; A. Alec T Talin; Francois Leonard; Gyorgy Vizkelethy; Brendan Gunning

doi:10.1117/12.2638041

3 October 2022 GaN vacuum nanoelectronic devices

George T. Wang, Keshab R Sapkota, A. Alec T Talin, Francois Leonard, Gyorgy Vizkelethy, Brendan Gunning

Proceedings Volume PC12200, Low-Dimensional Materials and Devices 2022; PC1220001 (2022) https://doi.org/10.1117/12.2638041
Event: SPIE Nanoscience + Engineering, 2022, San Diego, California, United States

Abstract

We discuss the fabrication and operation of GaN nanogap vacuum nanoelectronic diodes that operate in air and exhibit ultra-low turn-on voltage, high field emission current, excellent on-off ratio, and promising reliability and radiation hardness. We present experimental and modeling results on the characteristics of these devices at various nanogap sizes, operating pressures, and radiation environments. Preliminary results on the fabrication and characteristics of lateral GaN nano vacuum transistors will also be presented. These results provide key new insights into the behavior and potential of this new class of devices and point to future challenges and opportunities. Sandia National Laboratories is managed and operated by NTESS under DOE NNSA contract DE-NA0003525.

Conference Presentation

Citation Download Citation

George T. Wang, Keshab R Sapkota, A. Alec T Talin, Francois Leonard, Gyorgy Vizkelethy, and Brendan Gunning "GaN vacuum nanoelectronic devices", Proc. SPIE PC12200, Low-Dimensional Materials and Devices 2022, PC1220001 (3 October 2022); https://doi.org/10.1117/12.2638041

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