Presentation
17 March 2023 Orientation patterned GaAsP for nonlinear optical applications
Author Affiliations +
Abstract
HVPE growth of orientation patterned GaAsP (OP-GaAsP) layers with thickness exceeding 600 m and with excellent domain fidelity is accomplished for several arsenic-phosphorus compositions to obtain desired optical properties. This novel ternary material system could be an ideal candidate as compared to those of widely explored QPM materials – GaAs and GaP, for nonlinear frequency conversion in the mid- and long-wave infrared based on some specific pump sources, such as mode-locked Er-fiber lasers. Recent demonstration of second harmonic generation in an OP-GaAs0.15P0.85 structure brings us a step closer to implement such GaAsP QPM structures as frequency conversion devices.
Conference Presentation
© (2023) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Shivashankar R. Vangala, Duane Brinegar, Vladimir Tassev, and Valentin Petrov "Orientation patterned GaAsP for nonlinear optical applications", Proc. SPIE PC12405, Nonlinear Frequency Generation and Conversion: Materials and Devices XXII, PC124050M (17 March 2023); https://doi.org/10.1117/12.2650080
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KEYWORDS
Frequency conversion

Gallium arsenide

Infrared countermeasures

Infrared radiation

Long wavelength infrared

Mid-IR

Nonlinear frequency conversion

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