Presentation
21 March 2023 Dynamics of blue laser diodes with narrow and wide quantum wells
Author Affiliations +
Abstract
In this study laser diodes with different InGaN quantum well thickness up to 25 nm are analyzed. For those devices efficient screening of the piezoelectric field and operation on excited states was reported. We observe the time-dependent behavior of the intensity and emission spectrum below threshod operation, which can give insights about the QW tilt and the wave function overlap. In particular we observe a strong rise in intensity and a wavelength shift at the trailing edge of the pulse. Furthermore, we investigate the laser operation of the different quantum well width diodes showing unusual spectral-temporal behavior especially for the wide QW devices.
Conference Presentation
© (2023) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jannina Tepass, Lukas Uhlig, Mateusz Hajdel, Grzegorz Muziol, and Ulrich Theodor Schwarz "Dynamics of blue laser diodes with narrow and wide quantum wells", Proc. SPIE PC12421, Gallium Nitride Materials and Devices XVIII, (21 March 2023); https://doi.org/10.1117/12.2649715
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KEYWORDS
Quantum wells

Semiconductor lasers

Blue light emitting diodes

Diodes

Green light emitting diodes

Indium gallium nitride

Internal quantum efficiency

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