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21 March 2023 Excitons in InGaN: a numerical study
Aurelien David, Claude Weisbuch
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Proceedings Volume PC12421, Gallium Nitride Materials and Devices XVIII; (2023) https://doi.org/10.1117/12.2668386
Event: SPIE OPTO, 2023, San Francisco, California, United States
Abstract
Excitons in InGaN quantum wells are a complex phenomenon: due to the interplay between pronounced Coulomb interaction and strong alloy disorder, they possess a hybrid nature in-between the textbook cases of free and fully-localized excitons. Studying them also represent a significant computational challenge. We will present a thorough numerical investigation of these excitons, based on statistical exploration. We will show how the details of the quantum well structure can lead to a wide range of binding energies and wavefunction behaviors. We will discuss prospects for experimental observation.
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Aurelien David and Claude Weisbuch "Excitons in InGaN: a numerical study", Proc. SPIE PC12421, Gallium Nitride Materials and Devices XVIII, (21 March 2023); https://doi.org/10.1117/12.2668386
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KEYWORDS
Excitons
Indium gallium nitride
Materials properties
Physics
Quantum wells
Alloys
Design and modelling
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