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21 March 2023 Fundamental features of a Pd-based contact on p-GaN
Iryna Levchenko, Eliana Kaminska, Szymon Grzanka, Serhii Kryvyi, Piotr Perlin
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Proceedings Volume PC12421, Gallium Nitride Materials and Devices XVIII; (2023) https://doi.org/10.1117/12.2649230
Event: SPIE OPTO, 2023, San Francisco, California, United States
Abstract
Realization of ohmic contacts to p-GaN-based optical devices is challenging because of the absence of metals with sufficiently large work function, good adhesion and thermal stability. In order to to extend the lifetime of optoelectronic devices is necessary to increase the perfection of metal/semiconductor system. The technological aspects of contact formation should be understand on the atomic scale. In present work we will discuss the details of Pd-based/p-GaN system characteristics in terms of atomic structure and correlations with electrical properties of these contact layers after different type of annealing parameters (temperature, atmosphere) in order to reduce the contact resistivity and improve metallization stability.
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Iryna Levchenko, Eliana Kaminska, Szymon Grzanka, Serhii Kryvyi, and Piotr Perlin "Fundamental features of a Pd-based contact on p-GaN", Proc. SPIE PC12421, Gallium Nitride Materials and Devices XVIII, (21 March 2023); https://doi.org/10.1117/12.2649230
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KEYWORDS
Metals
Resistance
Interfaces
Light emitting diodes
Optical components
Optoelectronic devices
Oxidation
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