Narrow ridge III-nitride m-plane violet edge-emitting laser diodes with sidewall passivation using atomic layer deposition

Matthew S. Wong; Haojun Zhang; Emily S. Trageser; Ryan M. Anderson; James S. Speck; Shuji Nakamura; Steven P. DenBaars

doi:10.1117/12.2646155

21 March 2023 Narrow ridge III-nitride m-plane violet edge-emitting laser diodes with sidewall passivation using atomic layer deposition

Matthew S. Wong, Haojun Zhang, Emily S. Trageser, Ryan M. Anderson, James S. Speck, Shuji Nakamura, Steven P. DenBaars

Author Affiliations +

Proceedings Volume PC12421, Gallium Nitride Materials and Devices XVIII; (2023) https://doi.org/10.1117/12.2646155
Event: SPIE OPTO, 2023, San Francisco, California, United States

Abstract

In this work, the device performances of three laser architectures are examined. All the laser epitaxial structures are grown on freestanding m-plane GaN substrates by Metalorganic Chemical Vapor Deposition (MOCVD), with a peak emission wavelength of about 405 nm. The three laser device architectures are shallow-etch ridge design, which the ridges are defined by etching into the p-GaN layer and not through the active region, and the deep-etch ridge structure that etches through the active region with or without Atomic Layer Deposition (ALD) sidewall passivation. By utilizing ALD sidewall passivation, the optical and electrical characteristics show significant improvements than the other two device designs.

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Matthew S. Wong, Haojun Zhang, Emily S. Trageser, Ryan M. Anderson, James S. Speck, Shuji Nakamura, and Steven P. DenBaars "Narrow ridge III-nitride m-plane violet edge-emitting laser diodes with sidewall passivation using atomic layer deposition", Proc. SPIE PC12421, Gallium Nitride Materials and Devices XVIII, (21 March 2023); https://doi.org/10.1117/12.2646155

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