Graphene as low-absorbent contact layers in GaN-based LEDs

Gerd Bacher; Johanna Meier; Hehe Zhang; Umut Kaya; Wolfgang Mertin

doi:10.1117/12.2692824

13 March 2024 Graphene as low-absorbent contact layers in GaN-based LEDs

Gerd Bacher, Johanna Meier, Hehe Zhang, Umut Kaya, Wolfgang Mertin

Proceedings Volume PC12906, Light-Emitting Devices, Materials, and Applications XXVIII; PC129060D (2024) https://doi.org/10.1117/12.2692824
Event: SPIE OPTO, 2024, San Francisco, California, United States

Abstract

Two-dimensional (2D) materials represent an ultrathin material class with unique properties. For example, graphene as the first 2D material reported combines high electrical conductivity and high transparency making it ideally suited as transparent contact layer in GaN-based LEDs. Graphene has been grown by plasma-enhanced CVD and integrated into GaN-based light emitting devices for the visible and for the UV spectral range by a transfer-free approach. Pronounced lateral current spreading, and a reduced turn-on voltage indicate the suitability of our concept.

Conference Presentation

Citation Download Citation

Gerd Bacher, Johanna Meier, Hehe Zhang, Umut Kaya, and Wolfgang Mertin "Graphene as low-absorbent contact layers in GaN-based LEDs", Proc. SPIE PC12906, Light-Emitting Devices, Materials, and Applications XXVIII, PC129060D (13 March 2024); https://doi.org/10.1117/12.2692824

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