EUV Light Source for Lithography
Editor(s): Vivek Bakshi
Chapter Author(s): Hakaru Mizoguchi, Akira Endo, Yutaka Shiraishi, Tatsuya Yanagida, Shinji Nagai, Takashi Suganuma, Krzysztof Nowak, Georg Soumagne, Hiroaki Nakarai, Yoshifumi Ueno, Takashi Saito, Toshihiro Oga
Published: 2023
Author Affiliations +
Abstract
Extreme-ultraviolet (EUV) lithography uses EUV light of an extremely short wavelength of 13.5 nm. This allows for exposure of fine circuit patterns with a half-pitch below 20 nm that cannot be exposed by the conventional optical lithography using an ArF excimer laser (Table 7.1).
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KEYWORDS
Gas lasers

Extreme ultraviolet

Tin

Carbon monoxide

Plasma

Light sources

Extreme ultraviolet lithography

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