The Single-Electron Sensitive Read Out (SiSeRO) is an on-chip charge detector output stage for charge-coupled device image sensors. Developed at MIT Lincoln Laboratory, this technology uses a p-MOSFET transistor with a depleted internal gate beneath the transistor channel. The transistor source–drain current is modulated by the transfer of charge into the internal gate. At Stanford, we have developed a readout module based on the drain current of the on-chip transistor to characterize the device. In our earlier work, we characterized a number of first prototype SiSeROs with the MOSFET transistor channels at the surface layer. An equivalent noise charge of around 15 electrons root mean square was obtained. In this work, we examine the first buried-channel SiSeRO. We have achieved substantially improved noise performance of around |
ACCESS THE FULL ARTICLE
No SPIE Account? Create one
CITATIONS
Cited by 2 scholarly publications.
Tunable filters
Transistors
Digital filtering
X-rays
Interference (communication)
Cadmium sulfide
Electronic filtering