14 December 2018 Reduced dielectric charging RF MEMS capacitive switch
Khushbu Mehta, Deepak Bansal, Anuroop Bajpai, Ashudeep Minhas, Amit Kumar, Maninder Kaur, Prem Kumar, Kamaljit Rangra
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Abstract
The presence of dielectric charging in a switch causes stiction and drift in pull-in voltage. A design to alleviate charging issues for RF MEMS switches is proposed. An RF MEMS capacitive switch has been fabricated and characterized. Measured pull-in of the switch is <20  V and pull-up voltage is 17 V with a switching time of 78  μs. Insertion loss and isolation of the switch are measured by varying RF power from 0 to 15 dBm at room temperature. Insertion loss and isolation of the switch are better than 0.1 and 17 dB, respectively. Resonant frequency of the device is 8.4 kHz. The switch has completed 600 million cycles.
© 2018 Society of Photo-Optical Instrumentation Engineers (SPIE) 1932-5150/2018/$25.00 © 2018 SPIE
Khushbu Mehta, Deepak Bansal, Anuroop Bajpai, Ashudeep Minhas, Amit Kumar, Maninder Kaur, Prem Kumar, and Kamaljit Rangra "Reduced dielectric charging RF MEMS capacitive switch," Journal of Micro/Nanolithography, MEMS, and MOEMS 17(4), 045001 (14 December 2018). https://doi.org/10.1117/1.JMM.17.4.045001
Received: 7 August 2018; Accepted: 27 November 2018; Published: 14 December 2018
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Cited by 1 scholarly publication.
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KEYWORDS
Switches

Dielectrics

Microelectromechanical systems

Electrodes

Bridges

Switching

Capacitance

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