14 January 2019 Chirped multilayer quantum-dot mode-locked lasers with dual-wavelength and ground-state lasing emissions
Yu-Chen Chen, Pin-Hsien Hsieh, Gray Lin
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Abstract
Monolithic passively mode-locked lasers are investigated based on chirped multilayer InAs/InGaAs quantum-dot (QD) structure. The forward and backward tracings of light–current characteristics show two kinks and two hysteresis loops. The optical spectra reveal two lasing wavelengths around 1273 and 1230 nm, which are identified as two ground-state emissions of two differently chirped QD layers. The corresponding radio-frequency (RF) spectra of high-speed detector reveal two RF peaks at 16.21 and 16.03 GHz, which are attributed to fundamental mode-locking of two respective wavelengths. The laser pulses are confirmed by optical autocorrelator to exhibit dual-wavelength mode-locking. The pulsed characteristics of two lasing wavelengths are also discussed in terms of operating conditions.
© 2019 Society of Photo-Optical Instrumentation Engineers (SPIE) 1934-2608/2019/$25.00 © 2019 SPIE
Yu-Chen Chen, Pin-Hsien Hsieh, and Gray Lin "Chirped multilayer quantum-dot mode-locked lasers with dual-wavelength and ground-state lasing emissions," Journal of Nanophotonics 13(1), 016001 (14 January 2019). https://doi.org/10.1117/1.JNP.13.016001
Received: 25 October 2018; Accepted: 17 December 2018; Published: 14 January 2019
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Cited by 1 scholarly publication.
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KEYWORDS
Mode locking

Semiconductor lasers

Pulsed laser operation

Radio optics

Picosecond phenomena

Continuous wave operation

Etching

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