Combined atomic force microscopy-Raman mapping of electric field enhancement and surface-enhanced Raman scattering hot-spots for nanosphere lithography substrates

Claire S. Sweetenham; Ioan Notingher

doi:10.1117/1.3595345

1 January 2011 Combined atomic force microscopy-Raman mapping of electric field enhancement and surface-enhanced Raman scattering hot-spots for nanosphere lithography substrates

Claire S. Sweetenham, Ioan Notingher

Author Affiliations +

Journal of Nanophotonics, Vol. 5, Issue 1, 059504 (January 2011). https://doi.org/10.1117/1.3595345

Abstract

Surface-enhanced Raman spectroscopy (SERS) substrates formed by nanosphere lithography were investigated for their spatial distribution and magnitude of electric field enhancement. An integrated atomic force microscopy and Raman micro-spectroscopy system was used to establish, with high accuracy, the correlation between the local SERS mappings and substrate topography. Using a monolayer of rhodamine 6G as a probe of the local electric field, the high resolution Raman mappings, showed that the highest electric field enhancement originates from the metallic nanostructures rather than the gaps between them. The enhancement factor of the substrates is calculated from Raman spectra of the substrates covered in a monolayer of p-aminothiophenol and spatial measurements, giving a value on the order of 10⁵. The experimental results were confirmed by theoretical calculations using the finite element method.

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Claire S. Sweetenham and Ioan Notingher "Combined atomic force microscopy-Raman mapping of electric field enhancement and surface-enhanced Raman scattering hot-spots for nanosphere lithography substrates," Journal of Nanophotonics 5(1), 059504 (1 January 2011). https://doi.org/10.1117/1.3595345

Published: 1 January 2011

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