Thermoelectronic-wave coupling in laser photothermal theory of semiconductors at elevated temperatures

Andreas Mandelis; Marios Nestoros; Constantinos Christofides

doi:10.1117/1.601217

1 February 1997 Thermoelectronic-wave coupling in laser photothermal theory of semiconductors at elevated temperatures

Andreas Mandelis, Marios Nestoros, Constantinos Christofides

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Optical Engineering, Vol. 36, Issue 2, (February 1997). https://doi.org/10.1117/1.601217

quantitative analysis of linear temperature-dependent coupled thermoelectronic diffusion waves in the generation of the laserinduced IR photothermal radiometric signal from a photoexcited, plasmawave- dominated, semi-infinite semiconductor Si wafer is presented. The strong coupling between the (usually assumed decoupled) carrier and thermal wave transport equations is accounted for explicitly and the range of violation of the Vasil’ev-Sandomirskii condition is studied. Thermoelectronic coupling is found to degrade the sensitivity of the plasmaoriginating IR radiometric signal in high-quality process Si substrates at elevated background temperatures and high modulation frequencies, with the exception of highly degenerate plasmas

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Andreas Mandelis, Marios Nestoros, and Constantinos Christofides "Thermoelectronic-wave coupling in laser photothermal theory of semiconductors at elevated temperatures," Optical Engineering 36(2), (1 February 1997). https://doi.org/10.1117/1.601217

Published: 1 February 1997

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