In-situ ER-doped GaN optical storage devices using high-resolution focused ion beam milling

Boon Kwee Lee; Chih-Jen Chi; Irving Chyr; Dong-Seon Lee; Fred Richard Beyette Jr.; Andrew J. Steckl

doi:10.1117/1.1461833

1 April 2002 In-situ ER-doped GaN optical storage devices using high-resolution focused ion beam milling

Boon Kwee Lee, Chih-Jen Chi, Irving Chyr, Dong-Seon Lee, Fred Richard Beyette Jr., Andrew J. Steckl

Optical Engineering, Vol. 41, Issue 4, (April 2002). https://doi.org/10.1117/1.1461833

High-density GaN:Er optical storage devices were fabricated with focused ion beam (FIB) milling techniques. In-situ Er-doped GaN films (1-1.5 ?m thick) were grown on Si substrates. To "write" a bit, the GaN:Er film was selectively milled with a 30-keV Ga+ FIB. Data retrieval is accomplished by upconversion emission at 535/556 nm upon 1-xm IR laser stimulation. Regions where the Er- doped GaN layer is completely removed (and do not emit) are defined as logic "0," while regions that are not milled (and do emit) are defined as logic "1." Data patterns with submicron bit size (or 100 Mb/cm2 density) have been fabricated by FIB milling. Data written by this approach has a theoretical storage capacity approaching 10 Gbits/cm2.

©(2002) Society of Photo-Optical Instrumentation Engineers (SPIE)

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Boon Kwee Lee, Chih-Jen Chi, Irving Chyr, Dong-Seon Lee, Fred Richard Beyette Jr., and Andrew J. Steckl "In-situ ER-doped GaN optical storage devices using high-resolution focused ion beam milling," Optical Engineering 41(4), (1 April 2002). https://doi.org/10.1117/1.1461833

Published: 1 April 2002

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