40 Gb/s all-optical write/store memory using a single semiconductor optical amplifier-based logic gate

Marios Kalyvas

doi:10.1117/1.1617313

1 November 2003 40 Gb/s all-optical write/store memory using a single semiconductor optical amplifier-based logic gate

Marios Kalyvas

Optical Engineering, Vol. 42, Issue 11, (November 2003). https://doi.org/10.1117/1.1617313

We demonstrate an all-optical regenerative memory with full write/store capability of 40 Gb/s data packets. The memory uses an ultrafast nonlinear interferometer logic gate and does not perform data inverting in each pass. Regenerative storage of variable-length data packets with low switching energies and different storage times is verified.

©(2003) Society of Photo-Optical Instrumentation Engineers (SPIE)

Citation Download Citation

Marios Kalyvas "40 Gb/s all-optical write/store memory using a single semiconductor optical amplifier-based logic gate," Optical Engineering 42(11), (1 November 2003). https://doi.org/10.1117/1.1617313

Published: 1 November 2003

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available