Model for thickness dependence of mobility and concentration in highly conductive zinc oxide

David C. Look; Kevin D. Leedy; Arnold Kiefer; Bruce Claflin; Naho Itagaki; Koichi Matsushima; Iping Surhariadi

doi:10.1117/1.OE.52.3.033801

13 March 2013 Model for thickness dependence of mobility and concentration in highly conductive zinc oxide

David C. Look, Kevin D. Leedy, Arnold Kiefer, Bruce Claflin, Naho Itagaki, Koichi Matsushima, Iping Surhariadi

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Optical Engineering, Vol. 52, Issue 3, 033801 (March 2013). https://doi.org/10.1117/1.OE.52.3.033801

Abstract

The dependences of the 294 and 10 K mobility μ and volume carrier concentration n on thickness (d=25 to 147 nm) are examined in aluminum-doped zinc oxide (AZO). Two AZO layers are grown at each thickness, one with and one without a 20-nm-thick ZnON buffer layer. Plots of the 10 K sheet concentration n_s versus d for buffered (B) and unbuffered (UB) samples give straight lines of similar slope, n=8.36×10²⁰ and 8.32×10²⁰ cm⁻³, but different x-axis intercepts, δd=−4 and +13 nm, respectively. Plots of n_s versus d at 294 K produce substantially the same results. Plots of μ versus d can be well fitted with the equation μ(d)=μ(∞)/[1+d*/(d−δd)], where d* is the thickness for which μ(∞) is reduced by a factor 2. For the B and UB samples, d*=7 and 23 nm, respectively, showing the efficacy of the ZnON buffer. Finally, from n and μ(∞) we can use degenerate electron scattering theory to calculate bulk donor and acceptor concentrations of 1.23×10²¹ cm⁻³ and 1.95×10²⁰ cm⁻³, respectively, and Drude theory to predict a plasmonic resonance at 1.34 μm. The latter is confirmed by reflectance measurements

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David C. Look, Kevin D. Leedy, Arnold Kiefer, Bruce Claflin, Naho Itagaki, Koichi Matsushima, and Iping Surhariadi "Model for thickness dependence of mobility and concentration in highly conductive zinc oxide," Optical Engineering 52(3), 033801 (13 March 2013). https://doi.org/10.1117/1.OE.52.3.033801

Published: 13 March 2013

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