High-operating temperature InAsSb/AlSb heterostructure infrared detectors grown on GaAs substrates by molecular beam epitaxy

Malgorzata Kopytko; Emilia Gomolka; Piotr Martyniuk; Pawel Madejczyk; Jaroslaw Rutkowski; Antoni Rogalski

doi:10.1117/1.OE.57.12.127104

13 December 2018 High-operating temperature InAsSb/AlSb heterostructure infrared detectors grown on GaAs substrates by molecular beam epitaxy

Malgorzata Kopytko, Emilia Gomolka, Piotr Martyniuk, Pawel Madejczyk, Jaroslaw Rutkowski, Antoni Rogalski

Author Affiliations +

Optical Engineering, Vol. 57, Issue 12, 127104 (December 2018). https://doi.org/10.1117/1.OE.57.12.127104

Abstract

InAsSb/AlSb barrier detectors were grown on (100) semi-insulating GaAs substrates by a molecular beam epitaxy. We compare the performance of two detectors with different active layers denoted as p⁺B_ppB_pN⁺ and p⁺B_pnn⁺. InAs_0.81Sb_0.19 absorber allows to operate up to 5.3-μm cut-off wavelengths at 230 K. p⁺B_pnn⁺ detector (n-type absorber) exhibits diffusion-limited dark currents above 200 K. AlSb barrier provides low dark currents and suppresses surface leakage currents. With a value of 0.13 A / cm² at 230 K, the current is of about an order of magnitude larger than determined by the “Rule 07.” Dark currents of p⁺B_ppB_pN⁺ detector (p-type absorber) are much higher due to a contribution of Shockley–Read–Hall mechanisms. On the other hand, a device with a p-type absorber exhibits the highest value of current responsivity, up to 2.5 A / W, pointing out that there is a tradeoff between dark current performance and quantum efficiency.

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Malgorzata Kopytko, Emilia Gomolka, Piotr Martyniuk, Pawel Madejczyk, Jaroslaw Rutkowski, and Antoni Rogalski "High-operating temperature InAsSb/AlSb heterostructure infrared detectors grown on GaAs substrates by molecular beam epitaxy," Optical Engineering 57(12), 127104 (13 December 2018). https://doi.org/10.1117/1.OE.57.12.127104

Received: 6 September 2018; Accepted: 28 November 2018; Published: 13 December 2018

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