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1 April 2022 Simulation and demonstration of III-nitride optoelectronic devices containing wide quantum wells
Greg Muziol
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Proceedings Volume PC11995, Physics and Simulation of Optoelectronic Devices XXX; PC1199502 (2022) https://doi.org/10.1117/12.2615309
Event: SPIE OPTO, 2022, San Francisco, California, United States
Abstract
It is well known that piezoelectric polarization in III-nitride heterostructures causes a significant spatial separation of electrons and holes inside quantum wells (QWs). It is detrimental to optoelectronic devices due to the decreased oscillator strength. In this work we will show that wide InGaN QWs, despite extremely low wavefunction overlap between the ground electron and hole states, can have higher efficiency than the regularly used thin QWs. We propose a model in which the high efficiency comes from transitions through the excited states. Finally, application of the wide QWs to optoelectronic devices will be presented.
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Greg Muziol "Simulation and demonstration of III-nitride optoelectronic devices containing wide quantum wells", Proc. SPIE PC11995, Physics and Simulation of Optoelectronic Devices XXX, PC1199502 (1 April 2022); https://doi.org/10.1117/12.2615309
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KEYWORDS
Quantum wells
Optoelectronic devices
Electrons
Indium gallium nitride
Light emitting diodes
Oscillators
Photonics
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